Semiconductor heat dissipation
With the rapid development of semiconductor technology, the performance of power devices needs to be continuously improved to meet the requirements of the new generation of electronic products for high frequency and high power devices. Power devices based on the new generation of semiconductor material gallium nitride (GaN) have significant advantages such as high frequency, ultra-wideband and high output power, and have broad application prospects in the future communication field. However, the device will generate heat when working at high power. With the continuous accumulation of heat, the temperature of the chip will rise, resulting in a significant attenuation of the output power of the device, which cannot give full play to the performance of the device. Efficient heat dissipation technology at the chip level has therefore become a research hotspot in the semiconductor field.
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